feb.1999 mitsubishi semiconductor thyristor ? cr12am medium power use non-insulated type, glass passivation type cr12am application switching mode power supply, ecr, motor control ?i t (av) ......................................................................... 12a ?v drm ..............................................................400v/600v ?i gt ..........................................................................30ma unit v v v v v maximum ratings symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t c =91 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c g ratings 18.8 12.0 360 544 5 0.5 6 10 2 C40 ~ +125 C40 ~ +125 2.0 symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage dc off-state voltage class 8 400 500 320 400 320 12 600 720 480 600 480 type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 f 3.6?.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2?.2 4.5 23 1 4 * * measurement point of case temperature outline drawing dimensions in mm to-220 24 1 3 1
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feb.1999 mitsubishi semiconductor thyristor ? cr12am medium power use non-insulated type, glass passivation type ] 1. the contact thermal resistance r th (c-f) is 1.0 c/w with greased. electrical characteristics test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t c =25 c, i tm =40a, t j =25 c, v d =6v, i t =1a t j =125 c, v d =1/2v drm t j =25 c, v d =6v, i t =1a t j =25 c, v d =12v junction to case ] 1 unit ma ma v v v ma ma c/w typ. 15 symbol i rrm i drm v tm v gt v gd i gt i h r th (j-c) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current holding current thermal resistance limits min. 0.2 max. 2.0 2.0 1.6 1.5 30 1.2 10 0 23 5710 1 160 80 23 5710 2 44 240 320 400 120 40 200 280 360 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t c = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor thyristor ? cr12am medium power use non-insulated type, glass passivation type 10 ? 23 10 ? 5710 ? 23 5710 ? 23 5710 ? 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ? 10 0 5710 2 23 5710 3 23 5710 4 23 10 1 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 ? v fgm = 6v v gt = 1.5v i gt = 30ma p gm = 5w v gd = 0.2v i fgm = 2a p g(av) = 0.5w 160 60 ?0 ?0 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example 1.6 1.2 1.0 0.6 0.4 0 120 ?0 ?0 20 80 0.2 0.8 1.4 060 40 100 typical example distribution maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) time (s) 64 48 24 16 8 56 40 32 0 32 0 8162428 41220 q = 30 60 120 90 180 q 360 resistive, inductive loads 160 120 60 40 20 140 100 80 0 16 0 4 8 12 14 2610 q 360 q = 30 60 90 180 120 resistive, inductive loads gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?)
feb.1999 mitsubishi semiconductor thyristor ? cr12am medium power use non-insulated type, glass passivation type 64 48 24 16 8 56 40 32 0 32 0 8162428 41220 q = 30 60 120 90 180 270 dc q 360 resistive, inductive loads 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q 360 q = 30 60 180 120 90 resistive, inductive loads natural convection 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q = 30 60 180 90 120 q q 360 resistive loads natural convection 160 120 60 40 20 140 100 80 0 32 0 8162428 41220 180 q q 360 60 90 120 q = 30 resistive loads 64 48 24 16 8 56 40 32 0 32 0 8162428 41220 q = 30 60 90 180 q q 360 120 resistive loads 160 120 60 40 20 140 100 80 0 32 0 8162428 41220 q 360 resistive, inductive loads q = 30 180 dc 270 90 120 60 allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable case temperature vs. average on-state current (rectangular wave) case temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a)
feb.1999 mitsubishi semiconductor thyristor ? cr12am medium power use non-insulated type, glass passivation type 10.0 7.0 3.0 2.0 1.0 8.0 9.0 6.0 4.0 5.0 0 100 0 20 50 70 90 80 10 30 40 60 # t a = 25? v d = 100v r l = 12 w typical example i gt (25?) # 11.2ma 23 10 1 5710 2 23 5710 3 23 5710 4 160 0 80 100 120 140 40 60 20 # t j = 125? typical example i gt (25?) # 10.1ma 200 140 60 40 20 160 180 120 80 100 0 160 ?0 0 60 100 140 120 ?0 20 40 80 typical example 160 60 ?0 ?0 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 # 2 # 1 i gt (25?) # 1 10.6ma # 2 11.6ma typical example 200 140 60 40 20 160 180 120 80 100 0 160 ?0 0 60 100 140 120 ?0 20 40 80 typical example 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q = 30 60 180 120 90 q 360 270 dc resistive, inductive loads natural convection allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (?) average on-state current (a) breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) holding current vs. junction temperature holding current (ma) junction temperature (?) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = vv/? ) breakover voltage ( dv/dt = 1v/? ) repetitive peak reverse voltage vs. junction temperature junction temperature (?) 100 (%) repetitive peak reverse voltage (t j= t c ) repetitive peak reverse voltage (t j= 25 ? ) turn-on time vs. gate current turn-on time (?) gate current (ma)
feb.1999 mitsubishi semiconductor thyristor ? cr12am medium power use non-insulated type, glass passivation type 10 2 23 10 ? 5710 0 23 5710 1 23 5710 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 0.1s tw typical example gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc )
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